A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-01
著者
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Liu S‐s
National Defense Univ. Taoyuan Twn
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JANG Sheng-Lyang
Department of Electronic Engineering, National Taiwan Institute of Technology
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LIU Shau-Shen
Department of Electronic Engineering, National Taiwan Institute of Technology
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Jang S‐l
National Taiwan Univ. Sci. Technol. Taipei Twn
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CHYAU Chwan-Gwo
Department of Electronic Engineering, National Taiwan University of Science and Technology
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Liu Shau-shen
Department Of Electronic Engineering National Taiwan University Of Science And Technology
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Chyau C‐g
National Taiwan Univ. Sci. Technol. Taipei Twn
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Chyau Chwan-gwo
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Jang Sheng-lyang
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Liu Shau-Shen
Department of Electronic Engineering, National Taiwan University of Science and Technology
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Jang Sheng-Lyang
Department of Electronic Engineering, National Taiwan University of Science and Technology
関連論文
- An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model
- An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
- A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot
- Quadrature Hartley VCO and Injection-Locked Frequency Divider
- A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
- A Compact Buried-Channel Lightly-Doped-Drain Metal-Oxide-Semiconductor-Field-Effect-Transistor Model
- A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors
- Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects
- New Submicron and Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor I-V and C-V Model
- Deep-Submicron Lightly-Doped-Drain and Single-Drain Metal-Oxide-Semiconductor Transistor Drain Current Model for Circuit Simulation