Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects
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概要
- 論文の詳細を見る
In this paper, we present a new complete drain current model for metal-oxide-semiconductor field-effect-transistor devices with very thin gate oxide thickness and short-channel length. The model was developed using the drift-diffusion equation and the quasi-two-dimensional Poisson equation. The effects of the inversion layer centroid due to the quantum mechanical effect and the drain-induced-barrier-lowering due to short-channel length are taken into account in this model. The accuracy of this model has been checked by the experimental data of thin gate-oxide and short-channel devices.
- 社団法人応用物理学会の論文
- 1999-02-15
著者
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CHYAU Chwan-Gwo
Department of Electronic Engineering, National Taiwan University of Science and Technology
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Chyau Chwan-gwo
Department Of Electronic Engineering National Taiwan University Of Science And Technology
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Chyau Chwan-gwo
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Jang Sheng-lyang
Department Of Electronic Engineering National Taiwan Institute Of Technology
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SHEU Chorng-Jye
Department of Electronic Engineering, National Taiwan University of Science and Technology
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Sheu Chorng-jye
Department Of Electronic Engineering National Taiwan University Of Science And Technology
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