Deep-Submicron Lightly-Doped-Drain and Single-Drain Metal-Oxide-Semiconductor Transistor Drain Current Model for Circuit Simulation

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概要

• 論文の詳細を見る

• A new deep submicron I-V model for lightly-doped drain (LDD) and single-drain (SD) metal-oxide-semiconductor-field-effect-transistors (MOSFET) is presented. The physics-based and analytical model is developed using the drift-diffusion equation with a modified mobility formula to consider the effect of velocity overshoot and based on the quasi-two-dimensional Poisson equation. The drain-induced-barrier-lowering (DIBL), channel-length modulation, velocity overshoot, and parasitic source and drain resistances have been included in the model in a physically consistent manner. In this model, the LDD region is treated as a bias-dependent series resistance, and the drain-voltage drop across the LDD region has been considered in modeling the DIBL effect. This model is smoothly-continuous and valid in all regions of operation, its accuracy has been checked by comparing the calculated drain current, conductance and transconductance with the experimental data.

• 社団法人応用物理学会の論文
• 1998-01-15

著者

• Liu Shau-shen

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Jang Sheng-lyang

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Jang Sheng-lyang

  Department Of Electronic Engineering National Taiwan Institute Of Technology

関連論文

• An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
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• A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
• A Compact Buried-Channel Lightly-Doped-Drain Metal-Oxide-Semiconductor-Field-Effect-Transistor Model
• A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors
• Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects
• New Submicron and Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor I-V and C-V Model
• Deep-Submicron Lightly-Doped-Drain and Single-Drain Metal-Oxide-Semiconductor Transistor Drain Current Model for Circuit Simulation

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