An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-10-15
著者
-
Liu S‐s
National Defense Univ. Taoyuan Twn
-
JANG Sheng-Lyang
National Taiwan University of Science and Technology
-
HU Man-Chun
National Taiwan University of Science and Technology
-
LIU Shau-Shen
National Taiwan University of Science and Technology
-
Jang S‐l
National Taiwan Univ. Sci. Technol. Taipei Twn
-
Hu M‐c
National Taiwan Univ. Sci. And Technol. Taipei Twn
-
Liu Shau-Shen
Department of Electronic Engineering, National Taiwan University of Science and Technology
-
Jang Sheng-Lyang
Department of Electronic Engineering, National Taiwan University of Science and Technology
関連論文
- An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model
- An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
- A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot
- A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
- A Compact Buried-Channel Lightly-Doped-Drain Metal-Oxide-Semiconductor-Field-Effect-Transistor Model
- New Submicron and Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor I-V and C-V Model