Hu M‐c | National Taiwan Univ. Sci. And Technol. Taipei Twn

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概要

• 同名の論文著者
• National Taiwan Univ. Sci. And Technol. Taipei Twnの論文著者

関連著者

• Liu S‐s

  National Defense Univ. Taoyuan Twn

• HU Man-Chun

  National Taiwan University of Science and Technology

• Jang S‐l

  National Taiwan Univ. Sci. Technol. Taipei Twn

• Hu M‐c

  National Taiwan Univ. Sci. And Technol. Taipei Twn

• Liu Shau-Shen

  Department of Electronic Engineering, National Taiwan University of Science and Technology

• Jang Sheng-Lyang

  Department of Electronic Engineering, National Taiwan University of Science and Technology

• HU Man-Chun

  Department of Electronic Engineering, National Taiwan Institute of Technology

• JANG Sheng-Lyang

  Department of Electronic Engineering, National Taiwan Institute of Technology

• CHEN Young-Shying

  Department of Electronic Engineering, National Taiwan Institute of Technology

• LIU Shau-Shen

  Department of Electronic Engineering, National Taiwan Institute of Technology

• Hu Man-chun

  Department Of Electronic Engineering National Taiwan Institute Of Technology

• Liu Shau-shen

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Jang Sheng-lyang

  Department Of Electronic Engineering National Taiwan Institute Of Technology

• Chen Young-shying

  Department Of Electronic Engineering National Taiwan Institute Of Technology

• JANG Sheng-Lyang

  National Taiwan University of Science and Technology

• LIU Shau-Shen

  National Taiwan University of Science and Technology

• LIN Jien-Min

  Department of Electronic Engineering, National Taiwan Institute of Technology

• Lin Jien-min

  Department Of Electronic Engineering National Taiwan Institute Of Technology

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著作論文

• An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model
• An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
• A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

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