HU Man-Chun | Department of Electronic Engineering, National Taiwan Institute of Technology
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概要
関連著者
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HU Man-Chun
Department of Electronic Engineering, National Taiwan Institute of Technology
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Hu Man-chun
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Liu S‐s
National Defense Univ. Taoyuan Twn
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HU Man-Chun
National Taiwan University of Science and Technology
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JANG Sheng-Lyang
Department of Electronic Engineering, National Taiwan Institute of Technology
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CHEN Young-Shying
Department of Electronic Engineering, National Taiwan Institute of Technology
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LIU Shau-Shen
Department of Electronic Engineering, National Taiwan Institute of Technology
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Jang S‐l
National Taiwan Univ. Sci. Technol. Taipei Twn
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Hu M‐c
National Taiwan Univ. Sci. And Technol. Taipei Twn
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Liu Shau-shen
Department Of Electronic Engineering National Taiwan University Of Science And Technology
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Jang Sheng-lyang
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Chen Young-shying
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Liu Shau-Shen
Department of Electronic Engineering, National Taiwan University of Science and Technology
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Jang Sheng-Lyang
Department of Electronic Engineering, National Taiwan University of Science and Technology
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LIN Jien-Min
Department of Electronic Engineering, National Taiwan Institute of Technology
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Han Sui-chan
Department Of Electronics Engineering National Taiwan University Of Science And Technology
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Juang M‐h
National Taiwan Univ. Sci. & Technol. Taipei Twn
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JUANG Miin-Horng
Department of Electronics Engineering, National Taiwan University of Science and Technology
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Hu Man-chun
Department Of Electronics Engineering National Taiwan University Of Science And Technology
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Lin Jien-min
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Juang Miin-horng
Department Of Electrical Engineering National Taiwan University Of Science And Technology
著作論文
- An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
- A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot
- Effects of Ni Silicidation on the Shallow p^+n Junctions Formed by BF^+_2 Implantation into Thin Polycrystalline-Si Films on Si Substrates