Boron Implantation into GaAs/Ga_<0.5>In_<0.5>P Heterostructures
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-01-01
著者
-
HARTNAGEL Hans
Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt
-
Henkel Achim
Thomson-csf Laboratoire Central De Recherches Domaine De Corbeville
-
Blanck Herve
Thomson-csf Laboratoire Central De Recherches Domaine De Corbeville
-
Hartnagel Hans
Institut Fur Hochfrequenztechnik Fachbereich Elektrotechnik Und Informationstechnik Tu Darmstadt
-
Hartnagel Hans
Institut Fur Hochfrequenztechnik Th Darmstadt
-
DELAGE Sylvain
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville
-
FORTE-POISSON Marie
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville
-
Delage Sylvain
Thomson-csf Laboratoire Central De Recherches Domaine De Corbeville
-
Blanck Hervé
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cédex, Fra
-
Forte-poisson Marie
Thomson-csf Laboratoire Central De Recherches Domaine De Corbeville
-
HARTNAGEL Hans
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
-
di Forte-Poisson
Thomson-CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cédex, France
関連論文
- Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements
- Fabrication and Characterisation of Direct Schottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells
- Boron Implantation into GaAs/Ga_In_P Heterostructures
- Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
- Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process