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Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Semiconductor Company To | 論文

• Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
• Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
• Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium
• Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO_3 Capacitors for Future Dynamic Random Access Memories
• Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si

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