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ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics corp. | 論文
- Pt/Ba_xSr_TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Pocket Profiling of 0.1μm n-MOSFETs Using High Dose Indium Implantation
- Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 μm Embedded Dynamic Random Access Memory
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode