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Toshiba Nanoanalysis Corporation | 論文
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Study of Molecular Structures and Properties of Europium(III) Complexes with Phosphine Oxides by NMR Analysis
- Process of Molybdenum Powder Elution in Water
- New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe
- Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
- Three-Dimensional Dopant Characterization of Actual Metal--Oxide--Semiconductor Devices of 65 nm Node by Atom Probe Tomography
- Study of Molecular Structures and Properties of Europium(III) Complexes with Phosphine Oxides by NMR Analysis
- Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography
- Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65nm Node by Atom Probe Tomography