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Tokyo Ohka Kogyo Co. Ltd. | 論文
- Low-E_a Chemical Amplification Resists for 193nm Lithography
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- A Highly-Sensitive Dry Developable Resist
- High-Remaining Dry-Developed Resist Patterns of Steep Profile
- Effect of UV Irradiation on Microlens Arrays Fabricated by Room Temperature Nanoimprinting Using Organic Spin-on-Glass
- Crystalline Properties of Laser Crystallized Silicon Films
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Proton Dynamics in Chemically Amplified Electron Beam Resists
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- 高速金バンプ用耐クラックおよび微細プロファイルフォトレジスト〔英文〕 (電子材料技術の新展開)
- Decomposition and Roughness Analysis of Chemically Amplified Molecular Resist for Reducing Line Width Roughness
- Decomposition Analysis of Chemically Amplified Resists for Improving Critical Dimension Control
- Studies of the Photo Acid Generator Material Design for Chemically Amplified Photoresists
- Pattern Freezing Process Free Litho–Litho–Etch Double Patterning
- Low-$E_{\text{a}}$ Chemical Amplification Resists for 193 nm Lithography
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography