スポンサーリンク
The Institute of Scientific and Industrial Research | 論文
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists for Extreme Ultraviolet Lithography
- Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
- Effects of Dielectric Constant on Acid Generation in Chemically Amplified Resists for Post-Optical Lithography
- Delocalization of Positive and Negative Charge Carriers on Oligo- and Poly-fluorenes Studied by Low-Temperature Matrix Isolation Technique
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography : Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Dependence of Acid Yield on Chemically Amplified Electron Beam Resist Thickness
- Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75keV Electron Beam
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- 1P-259 バクテリア-細胞レベルでの細胞内ATPイメージング(バイオイメージング,第47回日本生物物理学会年会)
- 1TP4-10 Angle Dependency of ATP binding event in V1-ATPase(The 47th Annual Meeting of the Biophysical Society of Japan)
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- Negative Resist Material Based on Polysilanes for Electron Beam and X-Ray Lithographies
- Thermal Dehydration of a Poly(vinyl alcohol) Film Promoted by Diphenyliodonium Trifluoromethanesulfonate : Absorption Spectra and Elemental Analysis Results