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The Graduate School at Nagatsuta, Tokyo Institute of Technology | 論文
- In Situ Ellipsometric Observations of the Growth of Silicon Thin Films from Fluorinated Precursors, SiF_nH_m(n+m
- Study on Chemical Reactions on the Growing Surface to Control the Structures of μc-Silicon from Fluorinated Precursors
- Improvement of Photoluminescence Properties of ZnSe Film Grown by Hydrogen Radical-Enhanced Chemical Vapor Deposition Using Alternate Gas Supply and Substrate Bias Application
- Very Stable a-Si:H Prepared by "Chemical Annealing"
- Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
- Coherent Growth of ZnSe Thin Film at Low Growth Temperature by Hydrogen Radical Enhanced Chemical Vapor Deposition
- Preparation of μc-Si:H/a-Si:H Multilayers and Their Optoelectric Properties
- Critical Surface Reconstruction of Mesoscopic Particles
- Photocatalytic Decomposition of N_2O at Room Temperature
- Epitaxial Growth of CrO_2 Films on Rutile Surfaces