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The Electrical Communication Laboratory | 論文
- Improved Conversion Efficiency of Infrared Stimulable Phosphor (Y_La_x)_3 OCl_7: Yb^, Er^
- Effect of Dy^ on the Luminescence of Y_3OCl_7:Yb^.Er^
- Magnetoresistance of Heavily Doped n- and p- Type Germanium at 4.2°K
- Electrical Properties of Heavily Doped N-type Germanium
- Impurity Effect upon Mobility in Heavily Doped Silicon
- Electrical Properties of Heavily Doped n-Type Germanium
- Photoluminescence of Ga_xAl_As Crystals Grown by Liquid Phase Epitaxy
- Electrical Properties of Nickel Doped Germanium at Low Temperatures
- Paramagnetic Relaxation of Chromium Ion in Ruby and Potassium Alum
- Molecular Structure and Cracks of Films Formed by Gas Phase Reaction of SiH_4 and NH_3
- Measurement of the Distribution of Phosphorus Diffused in Silicon Dioxide Film Using ^P as a Tracer
- Infrared Stimulable Phosphor Matched with YAG:Nd Laser
- Paramagnetic Resonance of Gd^ in TiO_2 Crystal
- Trap Levels in Gallium Arsenide
- Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride
- Temperature Dependence of Tunnel Diode Characteristics
- Magnetoresistance of Heavily Doped Germanium at Low Temperatures
- Anisotropy of Magnetoresistance Caused by the Population Change
- Effect of Compensation on Phonon Coupling with Shallow Donor-Acceptor Pair Recombination in p-Type GaP
- Photoluminescence of Ge-Doped Ga_xAl_As