Impurity Effect upon Mobility in Heavily Doped Silicon
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1961-03-05
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関連論文
- Copper Diffused Gallium Arsenide P-N Junctions
- Vapor Plating of Tin onto Gallium Arsenide
- Effect of Dy^ on the Efficiency of Infrared to Visible Conversion Phosphor Y_3OCl_7:Yb^, Er^
- Orientation Effects in GaP Vapor Phase Epitaxial Growth
- Leakage Current in Zinc-Diffused GaAs Diodes
- Trap Density in Epitaxially Grown GaAs
- Electrical and Optical Properties of SnO_2-Si Heterojunctions
- Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode
- Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
- Improved Conversion Efficiency of Infrared Stimulable Phosphor (Y_La_x)_3 OCl_7: Yb^, Er^
- Effect of Dy^ on the Luminescence of Y_3OCl_7:Yb^.Er^
- Magnetoresistance of Heavily Doped n- and p- Type Germanium at 4.2°K
- Electrical Properties of Heavily Doped N-type Germanium
- Impurity Effect upon Mobility in Heavily Doped Silicon
- Electrical Properties of Heavily Doped n-Type Germanium
- Infrared Stimulable Phosphor Matched with YAG:Nd Laser
- Trap Levels in Gallium Arsenide
- Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride
- Temperature Dependence of Tunnel Diode Characteristics
- Magnetoresistance of Heavily Doped Germanium at Low Temperatures
- Anisotropy of Magnetoresistance Caused by the Population Change
- Effect of Compensation on Phonon Coupling with Shallow Donor-Acceptor Pair Recombination in p-Type GaP
- Photoconductivity in Nickel Doped Germanium