Copper Diffused Gallium Arsenide P-N Junctions

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1966-01-15

著者

• Aoki Tatsuo

  The Electrical Communication Laboratory

• FURUKAWA Yoshitaka

  The Electrical Communication Laboratory

• KAJIYAMA Kenji

  The Electrical Communication Laboratory

関連論文

• AsCl_3 Flow-Rate Dependence on Properties of Epitaxially Grown Gallium Arsenide
• Copper Diffused Gallium Arsenide P-N Junctions
• Vapor Plating of Tin onto Gallium Arsenide
• Effect of Dy^ on the Efficiency of Infrared to Visible Conversion Phosphor Y_3OCl_7:Yb^, Er^
• Orientation Effects in GaP Vapor Phase Epitaxial Growth
• Leakage Current in Zinc-Diffused GaAs Diodes
• Trap Density in Epitaxially Grown GaAs
• Electrical and Optical Properties of SnO_2-Si Heterojunctions
• Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode
• Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
• Improved Conversion Efficiency of Infrared Stimulable Phosphor (Y_La_x)_3 OCl_7: Yb^, Er^
• Effect of Dy^ on the Luminescence of Y_3OCl_7:Yb^.Er^
• Magnetoresistance of Heavily Doped n- and p- Type Germanium at 4.2°K
• Electrical Properties of Heavily Doped N-type Germanium
• Impurity Effect upon Mobility in Heavily Doped Silicon
• Electrical Properties of Heavily Doped n-Type Germanium
• Infrared Stimulable Phosphor Matched with YAG:Nd Laser
• Trap Levels in Gallium Arsenide
• Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride
• Temperature Dependence of Tunnel Diode Characteristics
• Magnetoresistance of Heavily Doped Germanium at Low Temperatures
• Anisotropy of Magnetoresistance Caused by the Population Change
• Effect of Compensation on Phonon Coupling with Shallow Donor-Acceptor Pair Recombination in p-Type GaP
• Photoconductivity in Nickel Doped Germanium

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