Electrical Properties of Heavily Doped n-Type Germanium

概要

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Experimental studies were made on electrical resistivity, Hall coefficient and magnetoresistance of As- Sb- and (As+sb) -doped germanium in the election concentration range of (10^<16>〜3x10^<19>cm^<-3>). The mobility difference between As- and Sb-doped germanium has been observed at room temperature. This difference seems to be related with the difference in the ionization energy of group V elements. From the present experiment, it has been concluded that in heavily doped germanium, interaction between electron and ionized impurity should be treated as short range force instead of Coulomb force owing to the fairly large screening effect, and as the result the nature of the core of impurity influences directly upon the impurity scattering.
社団法人日本物理学会の論文
1961-04-05