Electrical Properties of Nickel Doped Germanium at Low Temperatures

概要

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To study the anomalous phenomena of so-called impurity band conduction in semiconductors, the electrical properties of nickel doped p-and n-type germanium have been measured from room temperature to liquid air temperature. The energy differences between nickel levels and the edges of conduction and valence bands are so large that the anomalous behaviour was found in the temperature range of liquid air. A systematic study was made for the samples with different carrier concentration in nickel levels, and it was concluded that Hung's model was succesful to explain qualitatively the systematic change of the electrical properties of these samples. But to understand the experimental facts quantitatively, it seems to be necessary to develop further theoretical and experimental investigations on this problem.
社団法人日本物理学会の論文
1957-02-05