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The Electrical Communication Laboratory | 論文
- AsCl_3 Flow-Rate Dependence on Properties of Epitaxially Grown Gallium Arsenide
- Copper Diffused Gallium Arsenide P-N Junctions
- Vapor Plating of Tin onto Gallium Arsenide
- A Silicon Space Charge Limited Diode
- Preparation of Germanium Nitride Films on the Stained Germanium Crystal Surface
- The Temperature Dependence of the Capacity of the Copper Oxide Rectifier
- Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices
- Effect of Dy^ on the Efficiency of Infrared to Visible Conversion Phosphor Y_3OCl_7:Yb^, Er^
- Orientation Effects in GaP Vapor Phase Epitaxial Growth
- Leakage Current in Zinc-Diffused GaAs Diodes
- Trap Density in Epitaxially Grown GaAs
- Electrical and Optical Properties of SnO_2-Si Heterojunctions
- Intermolecular Potential between Large Molecules
- On the Electrical Properties of Silicon Single Crystals (I)
- Excess Carrier Concentrations in Cation-Saturated Pb_xSn_Te Solid Solutions
- Heat Treatment of Pb_xSn_Te Solid Solutions
- Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode
- Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
- Galvanomagnetic Effects of a Heavily Doped Germanium Crystal
- On the Impurity Conduction in Germanium