Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-05-05
著者
-
Niimi Tatsuya
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Niimi Tatsuya
The Electrical Communication Laboratory
-
IGARASHI Yoshitaka
The Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
YASHIRO Takehisa
The Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
TAKEUCHI Satoshi
Keio University
-
Yashiro Takehisa
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Igarashi Yoshitaka
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- A Silicon Space Charge Limited Diode
- Preparation of Germanium Nitride Films on the Stained Germanium Crystal Surface
- The Temperature Dependence of the Capacity of the Copper Oxide Rectifier
- Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices
- Determination of Trap Levels in Ge_3N_4 and Barrier Energies at the Ge_3N_4-Ge Interface by C-V Characteristics