Preparation of Germanium Nitride Films on the Stained Germanium Crystal Surface
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-03-05
著者
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Niimi Tatsuya
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Niimi Tatsuya
The Electrical Communication Laboratory
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IGARASHI Yoshitaka
The Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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KURUMADA Katsuhiko
The Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Igarashi Yoshitaka
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kurumada Katsuhiko
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- A Silicon Space Charge Limited Diode
- Preparation of Germanium Nitride Films on the Stained Germanium Crystal Surface
- The Temperature Dependence of the Capacity of the Copper Oxide Rectifier
- Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices