The Temperature Dependence of the Capacity of the Copper Oxide Rectifier

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概要

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• The temperature dependence of the capacity of the space charge layer at a metal semiconductor contact is investigated. The variation in the capacity with temperature has been calculated on the assumption that it should be caused by the temperature variation of the density of free charge carriers in the semiconductor. The results are compared, for an example, with the experimental data of the capacity of copper oxide rectifiers, which are measured by superimposing a small alternating voltage on the d.c. bias voltages, at the several temperatures between-160℃ and +60℃, and are analysed on the assumption that there exist some donor impurities in the bulk cuprous oxide layer in addition to the usual acceptor type. The comparison makes it clear that the equation derived theoretically can successfully explain the following facts: (1). At lower temperatures, the magnitude of capacity increases with increasing temperature, and reaches a maximum at a certain temperature and then begins to decrease at higher temperatures. (2). But, the temperature at which the magnitude of capacity reaches a maximum experimentally is slightly higher than that which the theoretical equation predicts. (3). The measurements at-110℃ and-160℃ show that the values of the capacity at these temperatures may be regarded as those affected by the temperature variation in the electrical resistivity of the bulk Cu_2O Iayer rather than the values of the pure barrier capacity. (4). The absolute value in the temperature variation of a barrier capacity expected from the derived equation is about 250μμ farads/cm^2 for copper oxide rectifiers, with-0.5 volt d.c. bias voltage applied between 0°K and 300°K, and this value agrees comparatively well with the experimental results. (5). The variations in capacity are dependent upon the d.c. bias voltage applied and will be smaller when the bias voltage becomes larger.

• 社団法人日本物理学会の論文
• 1955-06-05

著者

• Niimi Tatsuya

  The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Niimi Tatsuya

  The Electrical Communication Laboratory

関連論文

• A Silicon Space Charge Limited Diode
• Preparation of Germanium Nitride Films on the Stained Germanium Crystal Surface
• The Temperature Dependence of the Capacity of the Copper Oxide Rectifier
• Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices

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