Determination of Trap Levels in Ge_3N_4 and Barrier Energies at the Ge_3N_4-Ge Interface by C-V Characteristics

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概要

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• A combination of capacitance-voltage (C-V) measurement and photon radiation is used to determine trap levels in germanium nitride and a barrier energy at the germanium nitride-germanium interface. It is found that shallow and deep electron traps are present in germanium nitride and the deep trap levels lie below 3.1 eV from the conduction band edge. By analysis of spectral dependence of photoemission, it is concluded that the barrier energies for photoemission of electrons from the valence band of germanium to the conduction band of germanium nitride are 1.69, 1.65 and 1.53 eV for Al, Au and Ag electrodes on the same wafer, respectively. The reason for the difference between the barrier energies for various metal electrodes is discussed.

• 社団法人応用物理学会の論文
• 1971-12-05

著者

• Yashiro Takehisa

  The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Preparation of the Tetragonal Germanium Dioxide for the Passivation of Germanium Devices
• Determination of Trap Levels in Ge_3N_4 and Barrier Energies at the Ge_3N_4-Ge Interface by C-V Characteristics

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