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Technol. Res. Inst. Osaka Prefecture Osaka Jpn | 論文
- フォトニック結晶スラブ導波路における光と物質の非線形相互作用
- TiO2結晶による広波長領域にわたる多段コヒーレント・アンチストークス・ラマン光の発生現象
- フォトニック結晶による光の場の制御--光集積回路への応用
- フォトニック結晶の概観 (特集 フォトニック結晶)
- フォトニック結晶による光制御の最新技術
- フォトニック結晶による光の場の制御
- 29pYT-1 ハイパーラマン散乱によるガラスのボゾンピークの観測とその起源
- 29pYT-1 ハイパーラマン散乱によるガラスのボゾンピークの観測とその起源
- High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
- Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
- Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Noise Suppression and Intensity Modulation in Gain-Saturated Semiconductor Optical Amplifiers and Its Application to Spectrum-Sliced Light Sources
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)