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Taiwan Semiconductor Manufacturuing Company | 論文
- The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability
- The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process
- Analytical Model of Human Body Model Electrostatic Discharge Current Distribution and Novel Electrostatic Discharge Protection Structure
- A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors
- Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry (Special lssue on SISPAD'99)
- Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- A Predistortion Technique for DFB Laser Diodes in Lightwave CATV Transmission