スポンサーリンク
Taiwan Semiconductor Manufacturing Co. Hsin‐chu Twn | 論文
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
- Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
- A Si Device Making Method by Using PAG Contained TARC to Enhance DOF of Lithography Process
- Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry (Special lssue on SISPAD'99)
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Top Antireflective Coating Process for 193 nm Lithography
- A Piezoresistive Silicon Accelerometer Using Porous Silicon Micromachining and Flip-Chip Bonding