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TOSHIBA Corporation | 論文
- Au-Ge Ohmic Contact to n-GaAs by IR Lamp Alloying
- Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers
- 4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics
- A study on the temperature rise characteristics of porcelain housed 154kV metal oxide surge arrester under artificial pollution tests
- E-15 CONTACT STRENGTH ANALYSIS OF CERAMIC PLATE SUBJECTED TO CONTACT LOAD WITH BALL OR ROUND BAR(Session: Fatique/Contact Strength)
- Dynamic Analysis of a Rotor-Journal Bearing System with Large Dynamic Loads : Stiffness and Damping Coefficient Variations in Bearing Oil Films
- Dynamic Analysis of a Rotor-Journal Bearing System with Large Dynamic Loads : Influence of Relative Misalignment between the Bearings on the Characteristics of a Rigid Rotor System
- Analysis of Shock Wave Interaction with Porous Elastic Material
- Experiment on Effects of Porosity in the Interaction of Shock Wave and Foam
- Interatomic and Quasiatomic Auger Spectra of Sulfur on Some Metal Surfaces
- Intra-Ball and Inter-Ball Variability of Ring Crack Initiation Load of Silicon Nitride Bearing Balls
- Ring Crack Initiation Load of Silicon Nitride Bearing Balls
- Low Output Offset,8-bit Signal Driver ICs for XGA/SVGA TFT-LCDs (特集高性能アナログ電子回路)
- A Quadrature Demodulator for WCDMA Receiver Using Common-Base Input Stage with Robustness to Transmitter Leakage(Analog Circuits and Related SoC Integration Technologies)
- A Low LO Leakage and Low Power LO Buffer for Direct-Conversion Quadrature Demodulator(RF, Analog Circuit and Device Technologies)
- Probabilistic Strength Estimation for Ceramic-Metal Joints with Various Interlayer Thicknesses(Reliability Engineering in Materials and Structures)
- Reliability of Strength and Long-Term Life for Ceramics/Metal Jointing Parts under Neutron Irradiation(Reliability Engineering in Materials and Structures)
- AN ANALYSIS OF THREE-DIMENSIONAL UNSTEADY SUBSONIC FLOW THROUGH RECTILINEAR CASCADES
- An Operating System for the Intellectual Distributed Processing System : An Object Oriented Approach Based on Broadcast Communication
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide