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Sophia Univ. Tokyo Jpn | 論文
- Preparation and Superconducting Properties of La_(Ca_Sr_y)_Cu_2O_
- Crystal Structure of Low Oxygen-Defect Tetragonal Ba_2YCu_3O_
- Crystal Structure and Superconducting Properties of BaPb_Bi_xCu_yO_
- A High Efficiency Power Conditioner Using Bypass Diode Assisted Sinewave PWM Soft Switching Boost Chopper-Fed Inverter with Electrolytic Capacitorless DC Link
- Electron Tunneling Process between the Two Ground States in Coupled Quantum Well Structure
- Tunneling Time between Resonantly Coupled Quantum Wells : Measurement and Comparison with h/ΔE
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO by Molecular Beam Epitaxy Using NO_2 as Oxygen Source
- MBE Growth of ZnO Using NO_2 as Oxygen Source
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
- Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
- 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Structure and Bonding at the CaF_2/GaAs(111) Interface : Surfaces, Interfaces and Films
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps