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Sony Corp. Yokohama Jpn | 論文
- Integration of Laser Diodes and Photodiodes in Photonic Integrated Circuit for Measurement
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
- Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
- Color-Variable Light-Emitting Diode Utilizing Conducting Polymer Containing Fluorescent Dye
- A Super Thin Film Transistor in Advanced Poly Si Films
- Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- A Novel Gray-Scale Method for Ferroelectric Liquid Crystal Displays Utilizing Ultra-Fine Particles
- Large Area Exposure in Synchrotron Radiation Lithography Utilizing the Steering of the Electron Beam in the Storage Ring
- Effect of Nb Doping on Fatigue in Lead Zirconate Titanate
- Multiple Photochemical Hole Burning in Tetraphenylporphine Derivatives Using a Focused Laser Beam : Future Technology
- Multiple Photochemical Hole Burning in Tetraphenylporphine Derivatives Using a Focused Laser Beam
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- Grain Growth and Conductive Characteristics of Super Thin Polysilicon Films by Oxidation
- Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition (Special Issue on Heterostructure Electron Devices)
- Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor