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Shonan Inst. Technol. Kanagawa Jpn | 論文
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- Study of Surface Processes in the Digital Etching of GaAs
- XANES Analysis of Optical Activation Process of Er in Si:Er2O3 Thin Film:Electronic and Structural Modifications around Er (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Linear and Nonlinear Optical Properties of CdS and CdSe Nanoparticles Stabilized with Poly(N-vinyl-2-pyrrolidone)
- Processing and Superconducting Properties of GdBa_2Cu_3O_ Ceramics : Electrical Properties Condensed Matter
- Influence of Preparative Conditions on the Superconducting Characteristics in GdBa_2Cu_3O_ Ceramics : Electrical Properties of Condensed Matter
- Observation of GdBa_2Cu_3O_ Ceramic Microstructure : Electrical Properties of Condensed Matter
- Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Dependence of Magnetic Shielding Property on Critical Current Density
- Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si