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Seoul National Univ. Seoul Kor | 論文
- A Fully Coupled Analysis of Fluid Flow, Heat Transfer and Stress in Continuous Round Billet Casting
- 3-dimensional Mathematical Model for the Analysis of Continuous Beam Blank Casting Using Body Fitted Coordinate System
- 垂直加熱・冷却壁による水-固体微粒子懸濁液の自然対流 : 初期粒子濃度勾配の影響(熱工学, 内燃機関, 動力など)
- Mechanical Behavior of Carbon Steels in the Temperature Range of Mushy Zone
- High Temperature Deformation Behavior of Carbon Steel in the Austenite and δ-Ferrite Regions
- Analysis of Mold Wear during Continuous Casting of Slab
- Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr_0.3,Ti_0.7)O_3 Thin Films for the Infra-Red Sensor Devices
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio