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Semiconductor Leading Edge Technologies Inc. (selete) | 論文
- Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
- Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
- Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors