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Semiconductor Lab. | 論文
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
- Electrical Characteristics of Pt/SrBi_2 Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
- Electrical Characteristics of Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer