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Semiconductor Div., Electronics and Telecommunications Research Institute | 論文
- A 3.3 V 0.8 μm CMOS IF IC for CDMA/FM Cellular Phone
- A 3.3 V 0.8 μm CMOS IF IC for CDMA/FM Cellular Phone
- Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
- Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
- Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
- Low Noise Characteristics of 0.2μm Al_Ga_As/In_Ga_As/GaAs Pseudomorphic HEMTs with Wide Head T-Shaped Multifinger Gate
- Highly Reflective 1.55 μm In_Ga_xAl_yAs/In_Al_zAs Quaternary Bragg Mirrors Grown by Metalorganic Chennical Vapor Deposition (MOCVD)