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School of Science and Engineering Waseda University | 論文
- Magnetoelectric Effect of Fe_3O_4 at 77K. : I. Crystal Symmetry
- Structure and Magnetic Properties of New Trigonal Iron-Boracite, Fe3B7O13(OH)
- Phosphorus Implantation Effects in Mg Doped GaN Epilayers
- P-type doping for Be/C co-implantation in GaN
- Surface Structure of ZnO Single Crystals Analysed by Ion Scattering Spectroscopy
- A Numerical Investigation of the Effects of Fuel Ignitability (RON) in Diesel PCI Combustion Using CFD and Skeletal Chemistry Codes
- Growth of GaAs by LPE on Oxygen-Implanted GaAs Substrate
- Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation
- Arsenic Vacancy Formation in GaAs Annealed in Hydrogen Gas Flow
- On Brumer's family of RM-curves of genus two
- Performance robot serving as communication media : development of an 'eyeball robot' investigating bodily communication
- Microstructural Changes at the Initial Stage of Precipitation in an Aluminum-Silicon Alloy
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Fluctuation Theory of Interactive Communication Channels, by means of Set-Valued Mapping Concept (Special Section on Nonlinear Theory and Its Applications)
- Electrical Properties of GaAs-Films Grown by LPE on Oxygen-Implanted GaAs Substrates
- Accurate Evaluation Method of Molecular Binding Affinity from Fluctuation Frequency
- On a Method of Prevent Chatter in Boring Operations : (Manufacture and Test of New Anti-Chatter Boring Bar)
- Optimum Design of Structures with Regard to Their Vibrational Characteristics : 5th Report, Minimum Weight Design with Many Constraints in Natural Frequencies
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- II-8 Measurement Group Walking Pattern in the Japanese Gardens (Proceedings of the 38th Meeting of Japan Society of Physiological Anthropology)