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School of Engineering Nagoya University | 論文
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
- High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
- Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
- Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
- Measurement of Spatial Distribution of SiF_4 and SiF_2 Densities in High Density SiF_4 Plasma Using Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Spatial Distribution Measurement of Absolute Densities of CF and CF_2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Magnetic Properties of Co-Ni-Zn System Spinel Ferrite Fine Particles Prepared by the Chemical Coprecipitation Method
- 液中プラズマを用いたナノグラフェンの高速合成技術 (特集 「グラフェン」の実務的な視点での開発トレンド)
- プラズマCVD法によるカーボンナノウォールの制御合成
- THIOREDOXIN PEROXIDASE IN CYANOBACTERIA, Synechocystis sp. PCC6803 AND Synechococcus sp. PCC7942.
- Anomalous Diffusion in the Kicked Harper System : Condensed Matter and Statistical Physics
- Tris(pentafluorophenyl)boron as an Efficient, Air Stable, and Water Tolerant Lewis Acid Catalyst
- Regio- and Stereoselective Synthesis of 1,5-Dienes Using Allylic Barium Reagents
- Simultaneous Desulfurization and Deoxidation of Molten Steel with in Situ Produced Magnesium Vapor
- Similarity on algebraic specifications toward specification databases
- Simultaneous Observation of Millisecond Dynamics in Atomistic Structure, Force and Conductance on the Basis of Transmission Electron Microscopy : Surface, Interfaces, and Films
- Reflectivity Characteristics of Carbon Materials Irradiated with Hvdrogen Ion-Beam
- Machining Rate of Diamond by Steel during Cutting Process
- Machining of Diamond by Carbon Steel during Cutting Process (Calculation o Removal Rate)
- Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma