スポンサーリンク
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio | 論文
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
- Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_Ge_ Heterostructure Channel
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Enhanced Light Extraction in GaN-Based Light-Emitting Diodes with Holographically Fabricated Concave Hemisphere-Shaped Patterning on Indium–Tin-Oxide Layer
- InGaN/GaN Light-Emitting Diode on Concave-Hexagonal-Patterned Sapphire Substrate
- Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode
- Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process
- Enhanced Light Output Power of Near-Ultraviolet Light-Emitting Diodes with Au-Doped Graphene for Transparent and Current-Spreading Electrode