スポンサーリンク
School Of Electrical Engineering Korea University | 論文
- A design of novel IGBT with oblique trench gate (Silicon devices and materials)
- Influence of Post-Annealing on the Oxide Layer of AZ91 Mg Alloy Prepared by Plasma Electrolytic Oxidation
- A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
- A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
- Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles
- Electrical Properties of Electron-Beam Exposed Silicon Dioxides and Their Application to Nano-devices
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
- An Investigation of Electromagnetic Bandgap Structure as an Efficient Microstrip Antenna(Antennas and Propagation)
- A Physics-Based, SPICE (Simulation Program with Integrated Circuit Emphasis)-Compatible Non-Quasi-Static MOS (Metal-Oxide-Semiconductor) Transient Model Based on the Collocation Method
- Interference Cancellation and Multipath Mitigation Algorithm for GPS Using Subspace Projection Algorithms
- Multiple Scaling Extrinsic Soft Information for Improved Min-Sum Iterative Decoding of LDPC Codes
- Bandwidth-Efficient Mutually Cooperative Relaying with Spatially Coordinate-Interleaved Orthogonal Design
- Multidisciplinary Aeroelastic Computation of Composite Curved Wings
- Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
- An LTE-Band Dual-Antenna Design with an Enhanced Antenna Efficiency
- 菌類のエリシター処理と傷害処理に対し、栽培イネとは発現応答が異なる野性イネ(Oryza grandiglumis)の転写産物の解析
- A Low Power V-Band Injection-Locked Frequency Divider in 0.13-μm Si RFCMOS Technology
- A Reconfigurable Processor Infrastructure for Accelerating Java Applications
- Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope