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Samsung Electronics Gyeonggi‐do Kor | 論文
- Flare in Microlithographic Exposure Tools
- Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes
- Integration of Ferroelectric Random Access Memory Devices with Ir/IrO_2/Pb(Zr_xTi_)O^^_3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr_xTi_)O_3
- Enhanced Retention Characteristics of Pb(Zr, Ti)O_3 Capacitors by Ozone Treatment : Electrical Properties of Condensed Matter
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Microprobe Analysis of Pt Films Deposited by Beam Induced Reaction
- Microprobe Analysis of Pt Films Deposited by Beam Induced Reaction
- Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam
- Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam
- Well Structure by High Energy Boron Implantation for Soft Error Reduction in DRAMs
- Packet Scheduling Algorithms for Throughput Fairness and Coverage Enhancement in TDD-OFDMA Downlink Network(Wireless Communication Technologies)
- Spectral Properties of Nd^_-Doped RO・Na_2O・Al_2O_3・P_2O_5 (R=Mg, Ca, Ba) Glass System
- Coverage Enhancement in TDD-OFDMA Downlink by Using Simple-Relays with Resource Allocation and Throughput Guarantee Scheduler(Wireless Communication Technologies)