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Research Laboratories, Nippondenso Co., Ltd. | 論文
- Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
- Silicon Wafer Direct Bonding through the Amorphous Layer
- Superjunction by Wafer Direct Bonding
- Photooxidation of Propene to Propene Oxide by Molecular Oxygen over Zinc Oxide Dispersed on Silica
- Effect of Hydrothermal Treatment of Titania-pillared Montmorillonite for Photocatalytic Degradiation of Dibutyl Phthalate in Water
- Photooxidation of Propene by Molecular Oxygen over FSM-16
- A determination of coefficients of GPBiCG-AR method by reconsideration on inner product (ハイパフォーマンスコンピューティング)
- Silicon Wafer Direct Bonding without Hydrophilic Native Oxides
- Reduced Urination Rate while Drinking Beer with an Unpleasant Taste and Off-flavor
- Correlation between the Drinkability of Beer and Gastric Emptying
- H_2 Partial Pressure Dependences of CH_3 Radical Density and Effects of H_2 Dilution on Carbon Thin-Film Formation in RF Discharge CH_4 Plasma
- Effect of Rare Gas Dilution on CH_3 Radical Density in RF-Discharge CH_4 Plasma
- Effect of Pore-Diffusionn on Catalytic Reduction of NO over Co- and Cu-Mordenites
- Intelligent Power IC with Partial SOI Structure
- Fabrication of DC Supereonducting Quantum Interference Devices with Hybrid Structure of Polycrystalline Y_1Ba_2Cu_3O_x Films and Epitaxial Y_1Ba_2Cu_3O_x Films
- Soft X-Ray Emission Spectroscopic Analysis of Pt Silicides (Pt_2Si, PtSi)
- Analysis of Self-Heating in SOI High Voltage MOS Transistor (Special Issue on SOI Devices and Their Process Technologies)
- Novel Technique of Infrared Reflection Absorption Spectroscopy for Si Surface Study
- A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line (Special Issue on ASICs for Automotive Electronics)
- Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy