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Research Institute of Electrical Communication (RIEC), Tohoku University | 論文
- Photo-Induced Doping Effect of Organic Semiconductors(Session 9B Emerging Devices and Technologies III,AWAD2006)
- Photo-Induced Doping Effect of Organic Semiconductors(Session 9B Emerging Devices and Technologies III)
- Photo-Induced Doping Effect of Organic Semiconductors
- In-Situ Detection and Classification of DNA by Porous Alumina Filter in Conjugation with Infrared Absorption Spectroscopy
- Coordination of Carboxylate on Metal Nanoparticles Characterized by Fourier Transform Infrared Spectroscopy
- In-Situ Surface Infrared Study of DNA Attachment and Hybridization at Si Surfaces
- Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
- Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
- Si-Fullerene Compounds Produced by Controlling Spatial Structure of an Arc-Discharge Plasma
- Carrier Injection Characteristics in Organic Field Effect Transistors Studied by Displacement Current Measurement
- Soft X-Ray Optical Constants: Pt, Ag, and Cu : Techniques, Instrumentations nad Measurement
- In Situ Observation of Photon-Stimulated Hydrogen Removal on a HF-Passivated Si(111) Surface by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
- Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
- Examination of Surface-Roughness of Silicon Crystals by Double-Crystal X-Ray Topography
- Investigation of Growth Process of Carbon Nanotubes on Cobalt Catalysts using Infrared Absorption Spectroscopy(Session 8B Emerging Devices and Technologies II,AWAD2006)
- Investigation of Growth Process of Carbon Nanotubes on Cobalt Catalysts using Infrared Absorption Spectroscopy(Session 8B Emerging Devices and Technologies II)
- Plasma oxidation process of silicon surfaces investigated by infrared spectroscopy