スポンサーリンク
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan | 論文
- Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As+ Implantation
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Effect of Light Irradiation on Native Oxidation of Silicon Surface
- Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba,Sr)TiO3
- Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection
- Characteristics of Integrated Antenna on Si for On-Chip Wireless Interconnect
- Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature
- Low-$k$ Dielectric Film Patterning by X-Ray Lithography