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Research Center for Interface Quantum Electronics and Graduate School of | 論文
- Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on(001)InP Surfaces and Their Photoluminescence Characterizations
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
- Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG
- Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
- Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity
- Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_Ga_P on GaAs
- Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
- Gas-Source Molecular Beam Epitaxial Growth of In_Ga_xP on GaAs Using Tertiarybutylphosphine
- Controlled Formation of Narrow and Uniform InP-Based In_Ga_As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
- Controlled Formation of Narrow and Uniform InGaAs Ridge Quantum Wire Arrays on Patterned InP Substrates by Selective Molecular Beam Epitaxy
- RHEED Oscillation-Based Optimization of Growth Conditions for Gas-Source MBE Growth of InGaP Using Tertiarybutylphosphine
- Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
- Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy ( Quantum Dot Structures)
- Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation
- Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001)InP Substrates
- Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
- Excitation Power Dependent Photoluminescence Characterization and Successful Edge Passivation of Etched InGaAs Quantum Wires Formed by Electron Beam Lithography