スポンサーリンク
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Japan | 論文
- Distribution of Blood Glucose and the Correlation between Blood Glucose and Hemoglobin A1c Levels in Diabetic Outpatients
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
- III-V semiconductor hetero-structure nanowires by selective area MOVPE
- GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
- Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
- Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- Theoretical study on the photonic crystal slabs with hexagonal optical atoms
- Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy
- Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides