スポンサーリンク
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan | 論文
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure
- Proposal of graphene bandgap control by hexagonal network formation (Special issue: Microprocesses and nanotechnology)
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
- Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices
- Effects of Chemical Treatments and Ultrathin Al
- Terahertz Transmission Property of a Thin Metal Hole-Array Filter