Effects of Chemical Treatments and Ultrathin Al
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概要
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The effects of chemical treatments and Al<inf>2</inf>O<inf>3</inf>deposition on the InAlN surface were investigated by X-ray photoelectron spectroscopy (XPS). Independent of the extent of native oxide removal, the In 4d core-level binding energy was the same for untreated, HCl-treated, and HF-treated InAlN. This indicated a strong pinning tendency of the Fermi level at the InAlN bare surface. However, a 300 meV decrease in the In 4d binding energy was observed after atomic layer deposition (ALD) of Al<inf>2</inf>O<inf>3</inf>, which indicated an increase in the negative surface potential at the InAlN surface. The reduction of positive charge at the InAlN surface is discussed.
- 2013-08-25
著者
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AKAZAWA Masamichi
Research Center for Integrated Quantum Electronics, Hokkaido University
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Akazawa Masamichi
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Nakano Takuma
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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