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Research Center For Quantum Effect Electronics Tokyo Institute Of Technology | 論文
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- -P115- THE ROLE OF ENDOTHELIUM AND SMOOTH MUSCLE ON CORONARY ARTERY SPASM IN MINIATURE PIGS
- EFFECTS OF SERUM CHOLESTEROL LEVEL AND CORONARY INTIMAL LESION ON PROVOCATION OF CORONARY ARTERY SPASM IN ATHEROSCLEROTIC SWINE : Coronary Circulation (II) : FREE COMMUNICATIONS (IV) : PROCEEDINGS OF THE 49th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRC
- Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition
- Delayed TXOP method for VoIP communications in WLAN mesh networks (モバイルマルチメディア通信)
- Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO_2 Matrix
- Two-Gate Transistor for the Study of Si/SiO_2 Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device
- Structure Analysis of SrTiO_3/BaTiO_3 Strained Superlattice Films Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition
- Preferential Nucleation of Nanocrystalline Silicon along Microsteps
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics