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Research Center For Micro-structure Devices Nagoya Institute Of Technology | 論文
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
- High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
- Nematic Liquid Crystals with Polar Ordering Formed from Simple Aromatic Polyester
- リセスゲートを用いたサファイア基板上のAlGaN/GaN HEMTの諸特性
- リセスゲートを用いたサファイア基板上のAlGaN/GaN MODFETの諸特性
- リセスゲートを用いたサファイア基板上のAlGaN/GaN MODFETの諸特性
- 常圧MOCVD法によるGaN/AlGaN多層膜反射鏡の作製
- Molecular Beam Epitaxy of Gallium Antimonide
- High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer