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Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido | 論文
- Experimental Investigation of Carbon Oxidization
- Oxidation Mechanism of Diesel Particulate Matter in Plasma Discharges
- Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics
- MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices
- Contactless and Nondestructive Characterization of Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods
- High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
- Photoluminescence and Cathodoluminescence Characterization of InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy
- Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- Contactless Characterization of Thermally Oxidized, Air-Exposed and Hydrogen-Terminated Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods
- AlInN/GaN系ヘテロ構造の表面・界面評価 (電子デバイス)
- AlInN/GaN系ヘテロ構造の表面・界面評価(半導体プロセス・デバイス(表面,界面,信頼性),一般)