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Renesas Technol. Corp. Itami‐shi Jpn | 論文
- An Efficient Back-Bias Generator with Hybrid Pumping Circuit for 1.5-V DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Continuous Design Efforts for Ubiquitous Network Era under the Physical Limitation of Advanced CMOS(Digital,Low-Power, High-Speed LSIs and Related Technologies)
- Modeling of High-T_c Superconducting Transmission Lines with Anisotropic Complex Conductivity(Special Issue on Superconductive Devices and Systems)
- NAND-Structured DRAM Cell with Lithography-Oriented Design (Special Issue on ULSI Memory Technology)
- NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond
- Experimental Investigation of Noise Immunity Diagnosis for Battery Drived Circuit by Bulk Current Injection Test(Special Issue on Recent Progress in in Electromagnetic Compatibility Technology)
- Evaluation of SRAM-Core Susceptibility against Power Supply Voltage Variation